IRF8010 N Channel MOSFET Transistor

Description

IRF8010 is an N Channel MOSFET Transistor. It has a Low Gate to Drain Charge that reduces switching losses. Has a fully characterized capacitance including effective COSS to simplify design. Also has a fully characterized Avalanche Voltage and Current. In addition to that, Typical RDS(on) = 12mΩ

Features include;

• It has a Static drain source on resistance with RDS(on) ≤15mΩ
• It has an Enhancement mode
• To add on that, it has a Fast Switching Speed
• It is also 100% avalanche tested
• Last but least has a Minimum lot to lot variations for robust device performance
• And lastly, it has reliable operation

Applications of IRF8010

• Its used in high frequency DC-DC converters
• Also in UPS and Motor Control

Specifications;

• Designator: IRF8010
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• It has a Maximum Power Dissipation (Pd) of 260 W
• Drain-Source Maximum Voltage |Vds|: 100 V
• It also has a Maximum Gate-Source Voltage |Vgs|: 20 V
• In addition has a Maximum Drain Current |Id|of 80 A
• Has a Total Gate Charge (Qg): 81 nC
• Last but least, has a Maximum Drain Source On-State Resistance (Rds): 0.015 Ohm
• Lastly, Package: TO220AB

Datasheet

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