Name: IRL520N N-Channel MOSFET Transistor
SKU: 12017
Availability: InStock

IRL520N N-Channel MOSFET Transistor

KShs100

Specifications;

Type: n-channel
Drain to Source Breakdown Voltage: 100 V
Gate to Source Voltage, max: ±16 V
Drain-Source On State Resistance, max: 180.000 Ohm
Continuous Drain Current: 10 A
Total Gate Charge: 13.3 nC
Power Dissipation: 48 W
Package: TO-220AB

9 in stock

Categories: mosfet, Mosftets, Transistors Tags: IRL520N, N Channel MOSFET Transistor

Description
Reviews (0)

Description

IRL520N is an N Channel MOSFET. It is fast switching and has a ruggedized device design. It is also low on resistance and cost effective. In addition, its universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 W. Because of its low thermal resistance and low package cost of the TO-220AB, its wide accepted throughout the industry.

Features of IRL520N includes;

Has a Dynamic dV/dt Rating
Also has a Repetitive Avalanche Rated
It has a Logic Level Gate Drive
In addition has Simple drive requirements
Moreover, has a 175 °C Operating Temperature
Has a Fast Switching
Lastly, Ease of Paralleling

Specifications;

Designator: IRL520N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
It has a Power Dissipation of 48 W
Has a Drain Source Maximum Voltage |Vds| of 100 V
It also has a Maximum Gate Source Voltage |Vgs| of ±16 V
In addition has a Continuous Drain Current of 10 A
Has a Total Gate Charge (Qg) of 13.3 nC
Last but least, has a Maximum Drain Source On-State Resistance (Rds) of 180.000 Ohm
Lastly, Package: TO220AB