IRF830 N-Channel Power MOSFET

Description

Description

The IRF830 is a fast-switching high-voltage N-Channel MOSFET with a low on-state resistance. The MOSFET has a maximum drain-to-source voltage of 500V. The MOSFET will have a drain to source internal resistance of 1.5Ω when triggered with a 10V gate voltage. It provides designers the best combination of ruggedized device design, fast switching, cost-effectiveness, and low on-resistance.

Features of IRF830 MOSFET

• Package: TO-220
• Type of Transistor: MOSFET
• Type of Control Channel: N-Channel
• Max Power Dissipation (Pd): 75 W
• Max Drain-Source Voltage |Vds|: 500 V
• Max Gate-Source Voltage |Vgs|: ±20 V
• Max Gate-Threshold Voltage |Vgs(th)|: 4 V
• Max Drain Current |Id|: 4.5A
• Max Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 22 nC
• Drain-Source Capacitance (Cd): 800 pF
• Max Drain-Source On-State Resistance (Rds): 1.5 Ohm
• Max Storage & Operating temperature: -55 to +150 °C

Applications of IRF830

Applications of the IRF830 MOSFET include; inverter Circuits, DC-DC Converters, control speed of motor, LED dimmers or flasher, switch mode power supplies (smps), and switching high power devices.

Specifications;

• Type of Control Channel: N-Channel
• Number of Channels: 1 Channel
• Max Drain-Source Voltage: 500 V
• Max Drain Current: 4.5A
• Transistor Case Style: TO-220-3
• Transistor Mounting: Through Hole
• Max Gate-Source Voltage: ±20 V
• Max Gate-Threshold Voltage: 4 V

Datasheet