2N5401 PNP High Voltage Transistor
KShs10
Features of 2N5401 includes;
- It has a High collector breakdown voltage
- Has a DC Current Gain of up to 100
- It has an Operating temperature range of -55ºC to +150ºC
- Collector-Emitter Voltage of 150 V
- Also has a Collector Current of 0.6 A
- It also has a Collector-Base Voltage of 160 V
- Emitter-Base Voltage of 5V
- Collector Dissipation – 0.31 W
- To add on that, has a Collector Capacitance of 6 pF
- Transition Frequency is 100MHz
- Last but not least, has a Max. Operating Junction Temperature of 135 °C
- Lastly, has a Power dissipation of 0.62 W
Description
2N5401 is a PNP transistor. It is designed specifically for high voltage – low power switching applications and amplifications. The NPN complementary for this transistor is 2N5551. Mostly used in high voltage applications where load consumes very less power (i.e. Current drawn by load is low). These types of circuits can be seen in telephone systems. It can also be used when a simple switching device for high voltage loads is needed. Additionally, it is cheap and easy to work with.
Features of 2N5401 includes;
- It has a High collector breakdown voltage
- Has a DC Current Gain of up to 100
- It has an Operating temperature range of -55ºC to +150ºC
- Collector-Emitter Voltage of 150 V
- Also has a Collector Current of 0.6 A
- It also has a Collector-Base Voltage of 160 V
- Emitter-Base Voltage of 5V
- Collector Dissipation – 0.31 W
- To add on that, has a Collector Capacitance of 6 pF
- Transition Frequency is 100MHz
- Last but not least, has a Max. Operating Junction Temperature of 135 °C
- Lastly, has a Power dissipation of 0.62 W
Applications
- Used for General purpose switching and amplification
- Also used in Telephony applications
- Moreover, in High voltage application
Similar Transistors
2N5551 (NPN), MPSA92, MPSA93, BF723, 2N5096
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