BC109 Low Power Bipolar Transistor

KShs50

Features of BC109 include;

  • Has a Collector-Emitter Voltage of 25 V
  • Also has a Collector Current of 0.2 A
  • It also has a Collector-Base Voltage of 30 V
  • Has an Emitter-Base Voltage of 5 V
  • To add on that, has a Collector Power Dissipation of 0.3 W
  • Moreover, has a Transition Frequency is 150 MHz
  • Last but not least, has a Max. Operating Junction Temperature of 175 °C
  • Lastly, has a Collector Capacitance of 5 pF

 

Description

BC109 is a Low Power Bipolar Transistor. It is an NPN Silicon Planar Epitaxial Transistor. Mostly used for General purpose switching and amplification.

Features of BC109 include;

  • Has a Collector-Emitter Voltage of 25 V
  • Also has a Collector Current of 0.2 A
  • It also has a Collector-Base Voltage of 30 V
  • Has an Emitter-Base Voltage of 5 V
  • To add on that, has a Collector Power Dissipation of 0.3 W
  • Moreover, has a Transition Frequency is 150 MHz
  • Last but not least, has a Max. Operating Junction Temperature of 175 °C
  • Lastly, has a Collector Capacitance of 5 pF

 

Datasheet

 

 

 

 

 

 

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