TIP142T Silicon NPN Power Transistor
KShs100
Specifications of TIP142T
- Transistor Type: NPN
- Maximum Continuous Collector Current: 10 A
- Maximum Collector Emitter Voltage: 100 V
- Maximum Emitter Base Voltage: 5 V
- Package Type: TO-220
- Mounting Type: Through Hole
- Pin Count: 3
- Transistor Configuration: Single
- Number of Elements per Chip: 1
- Minimum DC Current Gain: 500
- Maximum Collector Base Voltage: 100 V
- Maximum Collector Emitter Saturation Voltage: 3 V
- Maximum Collector Cut-off Current: 1mA
- Minimum Operating Temperature: -65 °
Description
TIP142T is a silicon Epitaxial-Base NPN power transistor mounted in a TO-220 plastic package in a monolithic Darlington configuration. It is intended for use in power linear and
switching applications. The complementary PNP type is TIP147T.
Features of TIP142T
- Complementary PNP – NPN Devices
- Monolithic Darlington Configuration
- LOW Voltage
- HIGH Current
- HIGH Gain
Applications
- General Purpose Switching
Specifications of TIP142T
- Transistor Type: NPN
- Maximum Continuous Collector Current: 10 A
- Maximum Collector Emitter Voltage: 100 V
- Maximum Emitter Base Voltage: 5 V
- Package Type: TO-220
- Mounting Type: Through Hole
- Pin Count: 3
- Transistor Configuration: Single
- Number of Elements per Chip: 1
- Minimum DC Current Gain: 500
- Maximum Collector Base Voltage: 100 V
- Maximum Collector Emitter Saturation Voltage: 3 V
- Maximum Collector Cut-off Current: 1mA
- Minimum Operating Temperature: -65 °
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