IRF510 N Channel Power MOSFET

Description

The IRF510 is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is widely used in various electronic circuits due to its characteristics such as high switching speed, low gate drive power, and good thermal stability.

Features include;

• Freedom from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low Ciss and fast switching speeds
• Excellent thermal stability
• Integral Source-Drain diode
• High input impedance and high gain
• Complementary N- and P-Channel devices

Applications of IRF510;

• Switching converter and regulators
• Motor control circuits to drive DC motors
• Solar UPS

Specifications;

• Transistor Polarity: N-channel
• Drain-to-source voltage V_DS: 100V
• Drain-to-source current I_D: 5.6A
• On-state resistance (drain-to-source resistance) R_DS: 0.54Ω
• Operating temperature range: -55˚C to 175˚C
• Gate charge Q_g: 8.3nC
• Gate-source voltage V_GS: ±20V
• Maximum power dissipation: 43W
• Maximum voltage required to conduct: 2V to 4V
• Package type: TO-220AB

Datasheet

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